First-principles study of initial oxidation process of Ge(100) surfaces

被引:0
作者
Mizukoshi, Takahiro [1 ]
Oda, Masato [1 ]
机构
[1] Wakayama Univ, Dept Mat Sci & Chem, Wakayama 6408510, Japan
关键词
SCANNING-TUNNELING-MICROSCOPY; ATOMIC LAYER DEPOSITION; OXIDE-GROWTH; PHOTOELECTRON-SPECTROSCOPY; SI(100) SURFACES; GE(001) SURFACE; GE; O-2; CHEMISORPTION; ADSORPTION;
D O I
10.7567/JJAP.55.08PE03
中图分类号
O59 [应用物理学];
学科分类号
摘要
Stable structures of oxygen atoms inserted into Ge(100) surfaces are investigated by first-principles calculations based on the density functional theory. Comparing the total energies of several models, the most stable structure is realized when oxygen atoms are inserted into the backbond of a lower dimer atom and the next bond along the (100) direction. We calculate the electronic density of states to reveal the origin of the stability. The structure is stable because a dangling bond of the lower dimer atom disappeared to form a four-coordinated structure. We also reveal that the dangling bond disappears from equal-amplitude plots of wave functions. These results are due to the strong electronegativity of the oxygen atom. (C) 2016 The Japan Society of Applied Physics
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页数:4
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