Band diagram of metal-insulator-magnetic semiconductor (La0.85Sr0.15MnO3) structure at room temperature

被引：23

作者：

Kudo, T ^{[1
]}

Tachiki, M ^{[1
]}

Kashiwai, T ^{[1
]}

Kobayashi, T ^{[1
]}

机构：

[1] Osaka Univ, Fac Engn Sci, Dept Elect Engn, Toyonaka, Osaka 560, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1998年 / 37卷 / 8B期

关键词：

LaSrMnO; magnetoresistance; oxide semiconductor; photocurrent; EBIC; epitaxial film; laser ablation; SrTiO3;

D O I：

10.1143/JJAP.37.L999

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated electrical properties of a La0.85Sr0.15MnO3 magnetic semiconductor through observation of photoinduced current and electron-beam-induced current (EBIC) across the Al/(100)SrTiO3/(100)La0.85Sr0.15MnO3 metal-insulator-semiconductor (MIS) structure at room temperature. The test specimens were prepared by the Ar-F excimer laser ablation technique. According to the current flowing direction, it was observed that the La0.85Sr0.15MnO3 band bends downward at and near the interface. Furthermore, from determination of the flat-band condition, the work function of (100)La0.85Sr0.15MnO3 epitaxial film was estimated to be similar to 4.8 eV.

引用

页码：L999 / L1001

页数：3

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