Microscopic observation of the temperature coefficient distribution of microwave materials using scanning electron-beam dielectric microscopy

被引:0
作者
Cho, Y [1 ]
Satoh, A [1 ]
Odagawa, H [1 ]
机构
[1] Tohoku Univ, Res Inst Elect Commun, Aoba Ku, Sendai, Miyagi 9808577, Japan
关键词
capacitors; dielectric properties; dielectric temperature coefficient; electron microscopy;
D O I
10.1016/S0955-2219(01)00354-5
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Studies on scanning electron-beam dielectric microscopy (SEDM) are reported. This microscopy technique is used for determining the temperature coefficient distribution of dielectric materials using an electron-beam as a heat source. This microscopy technique, which has the ability to simultaneously observe SEM images and the material composition by EPMA, has a resolution better than that of photothermal dielectric microscopy. To demonstrate the usefulness of this technique. the two-dimensional image of a two-phase composite ceramic is measured. To shorten a measurement time, a new type of SEDM for measuring the real time transient response caused by a single pulsed electron-beam is also successfully developed. (C) 2001 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:2735 / 2738
页数:4
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