Excitation mechanism of luminescence centers in nanostructured ZnS:Tb thin-film electroluminescent devices

被引：0

作者：

Adachi, D. ^{[1
]}

Takei, K. ^{[1
]}

Toyama, T. ^{[1
]}

Okamoto, H. ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn Sci, Osaka 5608531, Japan

来源：

IDW '06: PROCEEDINGS OF THE 13TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3 | 2006年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Excitation mechanism of luminescence centers in low-operation-voltage nanostructured thin-film electroluminescent (NS-TFEL) device, of which emission layer is a multilayer composed with 4-nm-thick activator-ion-doped ZnS nanocrystal (NC) layers and 0.7-nm-thick insulating interlayers, has been studied. The voltage-dependence of EL intensity ratio originated from the D-5(3) and D-5(4) level of Tb3+ has revealed that the dominant mechanism is attributed to the direct-impact excitation by hot-electrons.

引用

页码：401 / 404

页数：4

共 9 条

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