Over 1.0 mm-long boron nitride nanotubes

被引:43
作者
Chen, Hua [1 ]
Chen, Ying [1 ]
Liu, Yun [2 ]
Fu, Lan [1 ]
Huang, Cheng [3 ]
Llewellyn, David [1 ]
机构
[1] Australian Natl Univ, Res Sch Phys Sci & Engn, Canberra, ACT 0200, Australia
[2] Australian Natl Univ, Res Sch Chem, Canberra, ACT 0200, Australia
[3] Australian Natl Univ, Electron Microscopy Unit, Canberra, ACT 0200, Australia
基金
澳大利亚研究理事会;
关键词
D O I
10.1016/j.cplett.2008.08.007
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Over 1.0 mm boron nitride nanotubes (BNNTs) were successfully synthesized by an optimized ball milling and annealing method. The annealing temperature of 1100 degrees C is crucial for the growth of the long BNNTs because at this temperature there is a fast nitrogen dissolution rate in Fe and the B/N ratio in Fe is 1. Such long BNNTs enable a reliable single tube configuration for electrical property characterization and consequently the average resistivity of the long BNNTs is determined to be 7.1 +/- 0.9 x 10(4) X cm. Therefore, these BNNTs are promising insulators for three dimensional microelectromechanical system. (c) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码:130 / 133
页数:4
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