Control of transient effects in distributed and lumped Raman amplifiers

被引:43
作者
Chen, CJ [1 ]
Ye, J [1 ]
Wong, WS [1 ]
Lu, YW [1 ]
Ho, MC [1 ]
Cao, Y [1 ]
Gassner, MJ [1 ]
Pease, JS [1 ]
Tsai, HS [1 ]
Lee, HK [1 ]
Cabot, S [1 ]
Sun, Y [1 ]
机构
[1] Onetta Inc, Sunnyvale, CA 94089 USA
关键词
D O I
10.1049/el:20010880
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A robust control scheme for suppressing transients in both lumped and distributed Raman amplifiers is demonstrated. The control method uses only output power monitoring and holds gain fluctuations on surviving channels to < +/-0.06 dB in an experiment.
引用
收藏
页码:1304 / 1305
页数:2
相关论文
共 6 条
[1]   Transient effects in saturated Raman amplifiers [J].
Chen, CJ ;
Wong, WS .
ELECTRONICS LETTERS, 2001, 37 (06) :371-373
[2]  
CHEN CJ, 2001, OAA 2001
[3]   100nm bandwidth flat-gain Raman amplifiers pumped and gain-equalised by 12-wavelength-channel WDM laser diode unit [J].
Emori, Y ;
Tanaka, K ;
Namiki, S .
ELECTRONICS LETTERS, 1999, 35 (16) :1355-1356
[4]  
Nissov M., 1997, 11th International Conference on Integrated Optics and Optical Fibre Communications 23rd European Conference on Optical Communications. IOOC-ECEC97. Post Deadline Papers (Conf. Publ. No.448), P9
[5]   Average inversion level, modeling, and physics of erbium-doped fiber amplifiers [J].
Sun, Y ;
Zyskind, JL ;
Srivastava, AK .
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1997, 3 (04) :991-1007
[6]  
ZHU B, 2001, OFC 2001