Characterization of Porous Polar Semiconductors by Their Optical Spectra in the Region of Phonon and Plasmon-Phonon Excitations

被引：3

作者：

Barlas, T. R. ^{[1
]}

Dmitruk, N. L. ^{[1
]}

Serdyuk, V. A. ^{[1
]}

机构：

[1] Natl Acad Sci, Lashkarev Inst Phys Semicond, UA-03028 Kiev, Ukraine

来源：

OPTICS AND SPECTROSCOPY | 2012年 / 112卷 / 02期

关键词：

INFRARED REFLECTANCE;

D O I：

10.1134/S0030400X1201002X

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Optical properties of porous A(3)B(5) semiconductors (GaAs, InP, and GaP) in the far-infrared region, in particular, the specular reflection and attenuated total reflection, including the excitation regime of surface polaritons, are considered. Considering a porous material as a composite, we performed calculations in the context of the effective medium model using two modifications of it, Maxwell-Garnett and Bruggeman, which correspond to two different topologies of the composite material-matrix and statistical. The effect of porosity of the material and of such parameters as doping, anisotropy, and penetration depth of an electromagnetic wave to a porous material on optical spectra is analyzed. In addition, some experimental data are presented and the adequacy of the performed numerical simulation is demonstrated. DOI: 10.1134/S0030400X1201002X

引用

页码：233 / 242

页数：10

共 18 条

[1] OPTICS IN STRATIFIED AND ANISOTROPIC MEDIA - 4X4-MATRIX FORMULATION [J].

BERREMAN, DW .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1972, 62 (04) :502-&

[2]

Born M., 2006, PRINCIPLES OPTICS

[3]

Dmitruk N, 2010, PHYS CHEM SOL STATE, V11, P13

[4]

Dmitruk N., 2009, OPTICS SMALL PARTICL

[5]

Dmitruk N. L., 2010, 5 INT C MAT SCI COND, P35

[6]

DMITRUK NL, 1989, SURFACE POLARITONS S

[7]

[Головань Л.А. Golovan L.A.], 2007, [Успехи физических наук, Uspekhi fizicheskikh nauk], V177, P619

[8] Electrochemical formation of self-assembled InP nanopore arrays and their use as templates for molecular beam epitaxy growth of InGaAs quantum wires and dots [J].

Hirano, T ;

Ito, A ;

Sato, T ;

Ishikawa, F ;

Hasegawa, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (2B) :977-981

[9] Observation of crossing pores in anodically etched n-GaAs [J].

Langa, S ;

Carstensen, J ;

Christophersen, M ;

Föll, H ;

Tiginyanu, IM .

APPLIED PHYSICS LETTERS, 2001, 78 (08) :1074-1076

[10] Infrared reflectance of thick p-type porous SiC layers [J].

MacMillan, MF ;

Devaty, RP ;

Choyke, WJ ;

Goldstein, DR ;

Spanier, JE ;

Kurtz, AD .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (04) :2412-2419

← 1 2 →