Growth of AlGaN/GaN heterostructure at various NH3 flows and reactor pressures and their 2DEG transport properties

被引：0

作者：

Kee, B ^{[1
]}

Oh, MS ^{[1
]}

Yoon, E ^{[1
]}

机构：

[1] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151742, South Korea

来源：

PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS | 2000年 / 1卷

关键词：

AlGaN; equilibrium partial pressure; composition; heterointerfaces; composition gradient; two dimensional electron gas;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of NH3 flow rate and reactor pressure on Al composition and the interface of AlGaN/GaN heterostructure were studied. Equilibrium partial pressure of Ga and Al over AlGaN alloy was calculated as a function of growth pressure, NH3 flow rate and temperature. It was found equilibrium vapor pressure of Al is significantly lower than that of Ga, thus, the alloy composition mainly controlled by Ga partial pressure. We believe that more decomposition of Ga occur at lower NH3 flow rate and higher growth pressure leads to preferred Al incorporation into AlGaN. The alloy composition gradient became larger at AlGaN/GaN heterointerface at higher reactor pressures, higher Al composition and low NH3 flow rate. This composition gradient reduced the sheet carrier concentration and electron mobility as well, We obtained an AlGaN/GaN heterostructure with sheet carrier density of similar to2 x 10(13) cm(-2) and mobility of 1250 and 5000 cm(2)/Vs at 300K and 100K, respectively.

引用

页码：113 / 116

页数：4

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