Improved Performance of Electroplated CZTS Thin-Film Solar Cells with Bifacial Configuration

被引：42

作者：

Ge, Jie ^{[1
]}

Yu, Yue ^{[1
]}

Ke, Weijun ^{[1
]}

Li, Jian ^{[1
]}

Tan, Xinxuan ^{[1
]}

Wang, Zhiwei ^{[1
,2
]}

Chu, Junhao ^{[3
]}

Yan, Yanfa ^{[1
]}

机构：

[1] Univ Toledo, Dept Phys & Astron, Wright Ctr Photovolta Innovat & Commercializat, Toledo, OH 43606 USA

[2] Natl Renewable Energy Lab, Golden, CO 80401 USA

[3] Chinese Acad Sci, Natl Lab Infrared Phys, Shanghai Inst Tech Phys, Shanghai 800081, Peoples R China

来源：

CHEMSUSCHEM | 2016年 / 9卷 / 16期

基金：

美国国家科学基金会;

关键词：

bifacial device; diffusion; indium tin oxide; kesterite; vapor annealing; CONDUCTING OXIDE BACK;

D O I：

10.1002/cssc.201600440

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Annealing in S vapor greatly improves the performance of electroplated Cu2ZnSnS4 (CZTS) solar cells based on the bifacial configuration of Al-doped ZnO (AZO, front contact)/ZnO/CdS/CZTS/indium tin oxide (ITO, back contact), as compared to H2S annealing in our previous works. S-vapor annealing does not cause severe damage to the conductivity of the ITO back contact. The highest device efficiency of 5.8% was reached under 1sun illumination from the AZO side. The well-preformed devices based on the ITO back contact demonstrate smaller series resistances and better fill factors, as compared to our substrate-type devices using Mo back contacts. An interfacial reaction at the ITO back contact has been revealed in experiments, which contributes to the formation of SnO2-enriched interfacial layer and diffusion of In from ITO into CZTS through the Sn sites. Incorporation of In does not significantly change the optical and structural properties or the grain size of CZTS absorbers.

引用

页码：2149 / 2158

页数：10

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[1] Cation ratio fluctuations in Cu2ZnSnS4 at the 20 nm length scale investigated by analytical electron microscopy [J].