Material properties of anisotropic conductive films (ACFs) and their flip chip assembly reliability in NAND flash memory applications

被引:14
|
作者
Jang, Kyung-Woon [1 ]
Chung, Chang-Kyu [1 ]
Lee, Woong-Sun [2 ]
Paik, Kyung-Wook [1 ]
机构
[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
[2] Hynix Semicond Inc, Icheon Si 467701, Kyoungki Do, South Korea
关键词
D O I
10.1016/j.microrel.2008.03.002
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, the material properties of anisotropic conductive films (ACFs) and ACF flip chip assembly reliability for a NAND flash memory application were investigated. Measurements were taken on the curing behaviors, the coefficient of thermal expansion (CTE), the modulus, the glass transition temperature T-g), and the die adhesion strength of six types of ACF. Furthermore, the bonding processes of the ACFs were optimized. After the ACF flip chip assemblies were fabricated with optimized bonding processes, reliability tests were then carried out. In the pressure cooker test, the ACF with the highest adhesion strength showed the best reliability and the ACF flip chip assembly revealed no delamination at the chip-ACF interface, even after 96 h. In the high temperature storage test and the thermal cycling test, the reliability of the ACF flip chip assembly strongly depends on the Tg value of the ACF. In the thermal cycling test, in particular, which gives ACF flip chip assemblies repetitive shear stress, high value of CTE above T-g accelerates the failure rate of the ACF flip chip assembly. From the reliability test results, ACFs with a high T-g and a low CTE are preferable for enhancing the thermal and thermo-mechanical reliability. In addition, a new double-sided chip package with a thickness of 570 mu m was demonstrated for NAND flash memory application. In conclusion, this study verifies the ACF feasibility, and recommends the optimum ACF material properties, for NAND flash memory application. (C) 2008 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1052 / 1061
页数:10
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