Amending the ferromagnetic properties of Ga0.94Mn0.06As films by He+ irradiation

被引：1

作者：

Ding Bin-Feng ^{[1
]}

Xiang Feng-Hua ^{[1
]}

Wang Li-Ming ^{[1
]}

Wang Hong-Tao ^{[1
]}

机构：

[1] Langfang Teachers Coll, Dept Phys & Elect Informat, Langfang 065000, Peoples R China

来源：

ACTA PHYSICA SINICA | 2012年 / 61卷 / 04期

基金：

中国国家自然科学基金;

关键词：

ion irradiation; ferromagnetism; magnetoresistance; III-V; TRANSPORT-PROPERTIES; MAGNETORESISTANCE; MAGNETOTRANSPORT; TEMPERATURE; TRANSITION;

D O I：

10.7498/aps.61.046105

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Ion irradiation of semiconductors is a well understood method to tune the carrier concentration in a controlled manner. We show that the ferromagnetism in Ga0.94Mn0.06As films, known to be hole-mediated, can be modified by He ion irradiation. The coercivity can be increased by more than three times. The magnetization, Curie temperature and the saturation field along the out-of-plane hard axis all decrease as the fluence increases. The electrical and structural characterization of the irradiated Ga0.94Mn0.06As layers indicates that the controlled amending of magnetism results from a compensation of holes by generated electrical defects and not from a structural modification.

引用

页数：6

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