The characterization of low-angle boundaries by EBSD

被引：67
|
作者：
Bate, PS
Knutsen, RD
Brough, I
Humphreys, FJ [1 ]
机构：
[1] Univ Manchester, Ctr Mat Sci, Manchester M1 7HS, Lancs, England
[2] Univ Cape Town, Dept Mech Engn, Ctr Mat Engn, ZA-7700 Rondebosch, South Africa
来源：
JOURNAL OF MICROSCOPY | 2005年 / 220卷
关键词：
angular resolution; EBSD; low angle boundaries; spatial resolution;
D O I：
10.1111/j.1365-2818.2005.01513.x
中图分类号：
TH742 [显微镜];
学科分类号：
摘要：
A method of accurately measuring misorientations by electron backscatter diffraction (EBSD), which is an extension of that proposed by Wilkinson and based on the comparison of diffraction patterns, is described. The method has been applied to linescans, and found to improve the angular resolution by a factor of more than 30. The consequent improvement in determining misorientation axes is also analysed. Small changes of orientation very close to some low-angle boundaries were investigated and found to be artefacts of the analysis. Measurements of the area from which diffraction patterns are generated show this to be much larger than the effective spatial resolution of EBSD, and it is concluded that this may be a limiting factor in the use of EBSD for microstructural characterization.
引用
收藏
页码：36 / 46
页数：11
相关论文
共 50 条
  • [41] Faceting of low-angle ⟨100⟩ tilt grain boundaries in aluminum
    Kirch, D. M.
    Zhao, B.
    Molodov, D. A.
    Gottstein, G.
    SCRIPTA MATERIALIA, 2007, 56 (11) : 939 - 942
  • [42] SEGREGATION OF SOLUTE ATOMS AT DISLOCATIONS IN LOW-ANGLE GRAIN-BOUNDARIES
    GREENBERG, A
    KOMEM, Y
    BAUER, CL
    SCRIPTA METALLURGICA, 1983, 17 (03): : 405 - 410
  • [43] EFFECT OF VOLUME CHARGE ON STRENGTH OF LOW-ANGLE BOUNDARIES IN LIF CRYSTALS
    ZUEV, LB
    DOROSHEN.NK
    FINKEL, VM
    KAMINSKA.LN
    FIZIKA TVERDOGO TELA, 1972, 14 (08): : 2435 - &
  • [44] Deep centers in bulk AlN and their relation to low-angle dislocation boundaries
    Polyakov, A. Y.
    Smirnov, N. B.
    Govorkov, A. V.
    Yugova, T. G.
    Scherbatchev, K. D.
    Avdeev, O. A.
    Chemekova, T. Yu.
    Mokhov, E. N.
    Nagalyuk, S. S.
    Helava, H.
    Makarov, Yu. N.
    PHYSICA B-CONDENSED MATTER, 2009, 404 (23-24) : 4939 - 4941
  • [45] RESIDUAL CONDUCTIVITY OF POLYCRYSTALLINE SEMICONDUCTORS WITH LOW-ANGLE GRAIN-BOUNDARIES
    DOSHCHANOV, KM
    SHAMIRZAEV, SK
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (12): : 1385 - 1387
  • [46] MECHANICAL AND THERMAL STABILITY OF LOW-ANGLE BOUNDARIES IN ZINC SINGLE CRYSTALS
    WEISSMANN, S
    FUJITA, H
    HIRABAYASHI, M
    JOURNAL OF APPLIED PHYSICS, 1961, 32 (06) : 1156 - &
  • [47] MOTION OF CHARGED LOW-ANGLE GRAIN-BOUNDARIES IN SOLID HELIUM
    GUENIN, BM
    DAHM, AJ
    PHYSICAL REVIEW B, 1981, 23 (03): : 1139 - 1145
  • [48] Formation of low-angle boundaries accompanying the deformation process by twinning in titanium
    Nikulin, I. S.
    Kamyshanchenko, N. V.
    Nikulicheva, T. B.
    Mishunin, M. V.
    Vokhmyanina, K. A.
    MATERIALS LETTERS, 2016, 182 : 253 - 256
  • [49] Depinning transition of dislocation assemblies: Pileups and low-angle grain boundaries
    Moretti, P
    Miguel, MC
    Zaiser, M
    Zapperi, S
    PHYSICAL REVIEW B, 2004, 69 (21): : 214103 - 1
  • [50] TEM INVESTIGATION OF LOW-ANGLE TWIST BOUNDARIES IN GAAS PREPARED BY SINTERING
    SCHINDLER, R
    ROSE, J
    AST, DG
    JOURNAL OF METALS, 1979, 31 (08): : F42 - F43
12345