Electrical and memory window properties of Sr0.8-xBaxBi2.2Ta2-yZryO9 ferroelectric gate in metal-ferroelectric-insulator-semiconductor structure

被引：13

作者：

Bozgeyik, M. S. ^{[1
,2
]}

Cross, J. S. ^{[3
]}

Ishiwara, H. ^{[4
]}

Shinozaki, K. ^{[2
]}

机构：

[1] Kahramanmaras Sutcu Imam Univ, Dept Phys, Fac Sci & Literature, TR-46100 Kahramanmaras, Turkey

[2] Tokyo Inst Technol, Dept Met & Ceram Sci, Meguro Ku, Tokyo 1528550, Japan

[3] Tokyo Inst Technol, Grad Sch Sci & Engn, Meguro Ku, Tokyo 1528550, Japan

[4] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

JOURNAL OF ELECTROCERAMICS | 2012年 / 28卷 / 2-3期

基金：

日本学术振兴会;

关键词：

Ferroelectric; SBT; BaZrO3; Memory window; MFIS; FIELD-EFFECT TRANSISTORS; HFO2 BUFFER LAYERS; PT/SRBI2TA2O9/HFO2/SI STRUCTURE; DATA RETENTION; FILMS; SRBI2TA2O9;

D O I：

10.1007/s10832-012-9698-3

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Electrical characteristics of Sr0.8-xBaxBi2.2Ta2-yZryO9 ferroelectric films grown on HfO2/Si wafers by sol-gel spin coating technique were investigated from the viewpoint of application as ferroelectric gates in metal-ferroelectric-insulator-semiconductor (MFIS) stacks. It was observed that the leakage current density level was 10(-8) A/cm(2) under 14 V for moderate doping ratio. Determined memory windows from C-V characteristics of Sr0.8Bi2.2Ta2O9 (SBT) and Sr0.8-xBaxBi2.2Ta2-yZryO9 (x = 0.04, 0.08, 0.12 and y = 0.1, 0.2, 0.3) are 0.59, 0.65, 0.75, and 0.86 V at gate sweeping bias of 5 V, respectively. Some part of electronic properties of Sr0.8-xBaxBi2.2Ta2-yZryO9 with the objective to enhance memory window up to 45 % were discussed. It was interpreted that defects which are formed in Ba and Zr modified SBT affected the electronic processes like leakage current, memory window and charge trapping.

引用

页码：158 / 164

页数：7

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