Improvement on thermal stability of power heterojunction bipolar transistor using non-uniform finger spacing

被引：2

作者：

Chen Liang ^{[1
]}

Zhang Wan-Rong ^{[1
]}

Jin Dong-Yue ^{[1
]}

Xie Hong-Yun ^{[1
]}

Xiao Ying ^{[1
]}

Wang Ren-Qing ^{[1
]}

Ding Chun-Bao ^{[1
]}

机构：

[1] Beijing Univ Technol, Coll Elect & Control Engn, Beijing 100124, Peoples R China

来源：

ACTA PHYSICA SINICA | 2011年 / 60卷 / 07期

基金：

中国国家自然科学基金;

关键词：

heterojunction bipolar transistor; coupling thermal resistance; finger spacing; TEMPERATURE; HBT; MODEL; BAND;

D O I：

10.7498/aps.60.078501

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

One method of non-uniform finger spacing is proposed to enhance thermal stability of multiple finger power heterojunction bipolar transistor. Using coupling thermal resistance to characterize the influence of the change of emitter spacing on thermal coupling, the relation between coupling thermal resistance and emitter spacing is obtained. Temperature distribution on the emitter fingers of multi-finger heterojunction bipolar transistor is studied by a numerical electro-thermal model. The results show that the heterojunction bipolar transistor with non-uniform finger spacing has a smaller temperature difference between fingers thant the traditional uniform finger spacing heterojunction bipolar transistor under the same power dissipation. So the method of non-uniform finger spacing is very effective to enhance the thermal stability.

引用

页数：5

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