Type II InSb/InAs quantum dot structures grown by molecular beam epitaxy using Sb2 and As2 fluxes

被引：1

作者：

Carrington, P. J. ^{[1
]}

Soiov'ev, V. A. ^{[1
,2
]}

Zhuang, Q. ^{[1
]}

Ivanov, S. V. ^{[2
]}

Krier, A. ^{[1
]}

机构：

[1] Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England

[2] Ioffe Phys Tech Inst, St Petersburg R-194021, Russia

来源：

QUANTUM SENSING AND NANOPHOTONIC DEVICES V | 2008年 / 6900卷

基金：

英国工程与自然科学研究理事会;

关键词：

mid-infrared; InSb Quantum Dots; light emitting diodes; molecular beam epitaxy;

D O I：

10.1117/12.755465

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report the molecular beam epitaxial growth of InSb quantum dots (QD) inserted as sub-monolayers in an InAs matrix and grown using Sb-2 and As-2 fluxes. These InSb QD nanostructures exhibit intense mid-infrared photoluminescence up to room temperature. The nominal thickness of the sub-monolayer insertions can be controlled by the growth temperature (T-Gr = 450-320 degrees C) which gives rise to the variation of the emission wavelength within the 3.6-4.0 mu m range at room temperature. Light emitting diodes where fabricated using ten InSb QD sheets and were found to exhibit bright electroluminescence with a single peak at 3.8 mu m at room temperature. A comparative analysis of the optical properties of the structures grown using (Sb-2,As-2) and (Sb-4,As-4) is also presented.

引用

页数：9

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