Improvement in the negative bias temperature stability of ZnO based thin film transistors by Hf and Sn doping

被引：22

作者：

Kim, Woong-Sun ^{[1
]}

Moon, Yeon-Keon ^{[1
]}

Kim, Kyung-Taek ^{[1
]}

Shin, Sae-Young ^{[1
]}

Du Ahn, Byung ^{[2
]}

Lee, Je-Hun ^{[2
]}

Park, Jong-Wan ^{[1
]}

机构：

[1] Hanyang Univ, Dept Mat Sci & Engn, Seoul 133791, South Korea

[2] Samsung Elect Co Ltd, LCD Business, Yongin 446711, Gyonggi Do, South Korea

来源：

THIN SOLID FILMS | 2011年 / 519卷 / 20期

关键词：

Thin film transistors (TFTs); Amorphous oxide semiconductors (AOSs); Hafnium-zinc oxide (HZO); Hafnium-zinc-tin oxide (HZTO); Negative bias temperature instability (NBTI); ATOMIC LAYER DEPOSITION; ROOM-TEMPERATURE; TRANSPARENT; PERFORMANCE;

D O I：

10.1016/j.tsf.2011.01.402

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We assessed the performance of ZnO TFTs using Si3N4 gate dielectrics after various treatments. A remarkable improvement in the transfer characteristics was obtained for the O-2 plasma treated ZnO TFT and SiO2 interlayer deposited ZnO TFT. Also, we developed amorphous hafnium-zinc-tin oxide (HZTO) thin film transistors (TFTs) and investigated the influence of hafnium (Hf) doping on the electrical characteristics of the hafnium-zinc oxide (HZO) thin film transistors. Doping with Hf can decrease the carrier concentration, which may result from a decrease of the field effect mobility, and reduce oxygen vacancy related defects in the interfacial layer. Adding tin (Sn) can suppress the growth of a crystalline phase in the HZTO films. The HZTO TFTs exhibited good electrical properties with a field effect mobility of 14.33 cm(2)/Vs, a subthreshold swing of 0.97 V/decade, and a high I-ON/OFF ratio of over 10(9). (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：6849 / 6852

页数：4

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