Commensurate-incommensurate transition of 4He adsorbed on a single C60 molecule
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作者:
Shin, Hyeondeok
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Konkuk Univ, Sch Phys, Div Quantum Phases & Devices, Seoul 143701, South KoreaKonkuk Univ, Sch Phys, Div Quantum Phases & Devices, Seoul 143701, South Korea
Shin, Hyeondeok
[1
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Kwon, Yongkyung
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Konkuk Univ, Sch Phys, Div Quantum Phases & Devices, Seoul 143701, South KoreaKonkuk Univ, Sch Phys, Div Quantum Phases & Devices, Seoul 143701, South Korea
Kwon, Yongkyung
[1
]
机构:
[1] Konkuk Univ, Sch Phys, Div Quantum Phases & Devices, Seoul 143701, South Korea
Path-integral Monte Carlo calculations have been performed to study He-4 adsorption on a single C-60 molecule. Helium corrugations on the fullerene molecular surface are incorporated with the He-4-C-60 interaction described by the sum of all He-4-C interatomic pair potentials. Radial density distributions show a layer-by-layer growth of He-4 with the first adlayer being located at a distance of similar to 6.3 angstrom from the center of the C-60 molecule. The monolayer shows different quantum states as the number of He-4 adatoms N varies. For N = 32, we find a commensurate solid, with each of the 32 adsorption sites on the molecular surface being occupied by a single He-4 atom. Various domain-wall structures are observed as more He-4 atoms are added and the first layer crystallizes into an incommensurate solid when it is completely filled. This commensurate-incommensurate transition of the helium monolayer is found to be accompanied by re-entrant superfluid response at a low temperature of 0.31 K with the superfluidity being totally quenched at N = 32, 44, and 48. Finally, the different quantum states observed in the helium monolayer around C-60 are compared with phase diagrams proposed for the corresponding layer on a graphite surface. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3685848]
机构:
Konkuk Univ, Div Quantum Phases & Devices, Sch Phys, Seoul 143701, South KoreaKonkuk Univ, Div Quantum Phases & Devices, Sch Phys, Seoul 143701, South Korea
Ahn, Jeonghwan
Lee, Hoonkyung
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Konkuk Univ, Div Quantum Phases & Devices, Sch Phys, Seoul 143701, South KoreaKonkuk Univ, Div Quantum Phases & Devices, Sch Phys, Seoul 143701, South Korea
Lee, Hoonkyung
Kwon, Yongkyung
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Konkuk Univ, Div Quantum Phases & Devices, Sch Phys, Seoul 143701, South KoreaKonkuk Univ, Div Quantum Phases & Devices, Sch Phys, Seoul 143701, South Korea
机构:
Oakland Univ, Dept Phys, Rochester, MI 48309 USA
Aalto Univ, Sch Sci, Dept Appl Phys, POB 11000, FI-00076 Aalto, Espoo, FinlandOakland Univ, Dept Phys, Rochester, MI 48309 USA
Elder, K. R.
Achim, C. V.
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Univ Concepcion, CRHIAM, Water Res Ctr Agr & Min, Concepcion, ChileOakland Univ, Dept Phys, Rochester, MI 48309 USA
Achim, C. V.
Granato, E.
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Inst Nacl Pesquisas Espaciais, Lab Associado Sensores & Mat, BR-12227010 Sao Jose Dos Campos, SP, Brazil
Brown Univ, Dept Phys, POB 1843, Providence, RI 02912 USAOakland Univ, Dept Phys, Rochester, MI 48309 USA
Granato, E.
Ying, S. C.
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Brown Univ, Dept Phys, POB 1843, Providence, RI 02912 USAOakland Univ, Dept Phys, Rochester, MI 48309 USA
Ying, S. C.
Ala-Nissila, T.
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Aalto Univ, Sch Sci, Dept Appl Phys, POB 11000, FI-00076 Aalto, Espoo, Finland
Brown Univ, Dept Phys, POB 1843, Providence, RI 02912 USAOakland Univ, Dept Phys, Rochester, MI 48309 USA