Interference effects in photoluminescence spectra of Cu2ZnSnS4 and Cu(In,Ga)Se2 thin films

被引:50
|
作者
Larsen, J. K. [1 ]
Li, S. -Y. [1 ]
Scragg, J. J. S. [1 ]
Ren, Y. [1 ]
Hagglund, C. [1 ]
Heinemann, M. D. [2 ]
Kretzschmar, S. [2 ]
Unold, T. [2 ]
Platzer-Bjorkman, C. [1 ]
机构
[1] Uppsala Univ, Angstrom Solar Ctr, Solid State Elect, S-75121 Uppsala, Sweden
[2] Helmholtz Zentrum Berlin Mat & Energie, D-14109 Berlin, Germany
基金
瑞典研究理事会;
关键词
OPTICAL-ABSORPTION; BACK CONTACT; SOLAR-CELLS; LUMINESCENCE; SULFURIZATION;
D O I
10.1063/1.4926857
中图分类号
O59 [应用物理学];
学科分类号
摘要
Photoluminescence (PL) is commonly used for investigations of Cu2ZnSnS(e)(4) [CZTS(e)] and Cu(In,Ga)Se-2 (CIGS) thin film solar cells. The influence of interference effects on these measurements is, however, largely overlooked in the community. Here, it is demonstrated that PL spectra of typical CZTS absorbers on Mo/glass substrates can be heavily distorted by interference effects. One reason for the pronounced interference in CZTS is the low reabsorption of the PL emission that typically occurs below the band gap. A similar situation occurs in band gap graded CIGS where the PL emission originates predominantly from the band gap minimum located at the notch region. Based on an optical model for interference effects of PL emitted from a thin film, several approaches to reduce the fringing are identified and tested experimentally. These approaches include the use of measured reflectance data, a calculated interference function, use of high angles of incidence during PL measurements as well as the measurement of polarized light near the Brewster angle. (C) 2015 AIP Publishing LLC.
引用
收藏
页数:9
相关论文
共 50 条
  • [1] Correcting for interference effects in the photoluminescence of Cu(In,Ga)Se2 thin films
    Wolter, Max Hilaire
    Bissig, Benjamin
    Reinhard, Patrick
    Buecheler, Stephan
    Jackson, Philip
    Siebentritt, Susanne
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 14 NO 6, 2017, 14 (06):
  • [2] Photoluminescence and Photoluminescence Excitation Spectroscopy of Cu(In,Ga)Se2 Thin Films
    Hebert, Damon N.
    Soares, Julio A. N. T.
    Rockett, Angus A.
    THIN-FILM COMPOUND SEMICONDUCTOR VOLTAICS-2009, 2010, 1165 : 93 - +
  • [3] Electrodeposited Cu2ZnSnS4 thin films
    Valdes, M.
    Modibedi, M.
    Mathe, M.
    Hillie, T.
    Vazquez, M.
    ELECTROCHIMICA ACTA, 2014, 128 : 393 - 399
  • [4] Comparative study of the luminescence and intrinsic point defects in the kesterite Cu2ZnSnS4 and chalcopyrite Cu(In,Ga)Se2 thin films used in photovoltaic applications
    Romero, Manuel J.
    Du, Hui
    Teeter, Glenn
    Yan, Yanfa
    Al-Jassim, Mowafak M.
    PHYSICAL REVIEW B, 2011, 84 (16)
  • [5] Cu2ZnSnS4 thin film deposited by sputtering with Cu2ZnSnS4 compound target
    Nakamura, Ryota
    Tanaka, Kunihiko
    Uchiki, Hisao
    Jimbo, Kazuo
    Washio, Tsukasa
    Katagiri, Hironori
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (02)
  • [6] Effects of Cu content on the photoelectrochemistry of Cu2ZnSnS4 nanocrystal thin films
    Khoshmashrab, Saghar
    Turnbull, Matthew J.
    Vaccarello, Daniel
    Nie, Yuting
    Martin, Spencer
    Love, David A.
    Lau, Po K.
    Sun, Xuhui
    Ding, Zhifeng
    ELECTROCHIMICA ACTA, 2015, 162 : 176 - 184
  • [7] The chemical vapor deposition of Cu2ZnSnS4 thin films
    Ramasamy, Karthik
    Malik, Mohammad A.
    O'Brien, Paul
    CHEMICAL SCIENCE, 2011, 2 (06) : 1170 - 1172
  • [8] Spray deposition of Cu2ZnSnS4 thin films
    Valdes, M.
    Santoro, G.
    Vazquez, M.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2014, 585 : 776 - 782
  • [9] Metastable electrical transport in Cu(In,Ga)Se2 thin films and ZnO/CdS/Cu(In,Ga) Se2 heterostructures
    Engelhardt, F
    Schmidt, M
    Meyer, T
    Seifert, O
    Parisi, J
    Rau, U
    PHYSICS LETTERS A, 1998, 245 (05) : 489 - 493
  • [10] Growth and Raman scattering characterization of Cu2ZnSnS4 thin films
    Fernandes, P. A.
    Salome, P. M. P.
    da Cunha, A. F.
    THIN SOLID FILMS, 2009, 517 (07) : 2519 - 2523