Long-wavelength light emission from self-assembled heterojunction quantum dots

被引：7
|
作者：
Zhou, Zhiqiang [1 ]
Xu, Yingqiang [1 ]
Hao, Ruiting [1 ]
Tang, Bao [1 ]
Ren, Zhengwei [1 ]
Niu, Zhichuan [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
来源：
JOURNAL OF APPLIED PHYSICS | 2008年 / 103卷 / 09期
基金：
中国国家自然科学基金; 国家高技术研究发展计划(863计划);
关键词：
D O I：
10.1063/1.2919121
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The authors report the optical characteristics of GaSb/InAs/GaAs self-assembled heterojunction quantum dots (QDs). With increasing GaSb deposition, the room temperature emission wavelength can be extended to 1.56 mu m. The photoluminescence mechanism is considered to be a type-II transition with electrons confined in InAs and holes in GaSb.(C) 2008 American Institute of Physics.
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页数：3
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