Wideband balun-LNA with simultaneous output balancing, noise-canceling and distortion-canceling

被引:428
作者
Blaakmeer, Stephan C. [1 ]
Klumperink, Eric A. M. [1 ]
Leenaerts, Domine M. W. [2 ]
Nauta, Bram [1 ]
机构
[1] Univ Twente, CTIT Inst, IC Design Grp, Enschede, Netherlands
[2] NXP Semicond, Res, NL-2525 AE Eindhoven, Netherlands
关键词
CMOS integrated circuits; distortion canceling; linearity; low noise; low-noise amplifiers (LNAs); low-power electronics; noise canceling; noise cancellation; wideband LNA; wideband matching;
D O I
10.1109/JSSC.2008.922736
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An inductorless low-noise amplifier (LNA) with active balun is proposed for multi-standard radio applications between 100 MHz and 6 GHz. It exploits a combination of a common-gate (CG) stage and an admittance-scaled common-source (CS) stage with replica biasing to maximize balanced operation, while simultaneously canceling the noise and distortion of the CG-stage. In this way, a noise figure (NF) close to or below 3 dB can be achieved, while good linearity is possible when the CS-stage is carefully optimized. We show that a CS-stage with deep submicron transistors can have high IIP2, because the v(gs). v(ds) cross-term in a two-dimensional Taylor approximation of the I-DS(V-GS, V-DS) characteristic can cancel the traditionally dominant square-law term in the IDS(VGS) relation at practical gain values. Using standard 65 nm transistors at 1.2 V supply voltage, we realize a balun-LNA with 15 dB gain, NF < 3.5 dB and IIP2 > +20 dBm, while simultaneously achieving an IIP3 > 0 dBm. The best performance of the balun is achieved between 300 MHz to 3.5 GHz with gain and phase errors below 0.3 dB and +/-2 degrees. The total power consumption is 21 mW, while the active area is only 0.01 mm(2).
引用
收藏
页码:1341 / 1350
页数:10
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