Highly reliable 250 WGaN high electron mobility transistor power amplifier

被引：63

作者：

Kikkawa, T ^{[1
]}

机构：

[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2005年 / 44卷 / 7A期

关键词：

GaN; HEMT; power amplifier; base station; push-pull; W-CDMA; reliability;

D O I：

10.1143/JJAP.44.4896

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A state-of-the-art highly reliable 250 W AlGaN/GaN high electron mobility transistor (HEMT) push-pull transmitter amplifier operated at a drain bias voltage of 50 V is described. The amplifier, combined with a digital predistortion (DPD) system, also achieved an adjacent channel leakage power ratio (ACLR) of less than -50 dBc for 4-carrier wideband code division multiple access (W-CDMA) signals with a drain supply voltage of 50 V. I also demonstrate its stable operation under RF stress testing for 1000h at a drain bias voltage of 60V. Stable gate-leakage current for high-temperature operation was verified. Device fabrications on 4 inch sapphire and 3 inch semi-insulating (S.I.) SiC substrates were also addressed. These performances clarify that an AlGaN/GaN HEMTs amplifier is suitable for 3G W-CDMA systems.

引用

收藏

页码：4896 / 4901

页数：6

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