Transparent and conductive ZnO:Al thin films grown by pulsed magnetron sputtering in current or voltage regulation modes

被引：15

作者：

Guillen, C. ^{[1
]}

Herrero, J. ^{[1
]}

机构：

[1] CIEMAT, Dept Energy Edif 42, E-28040 Madrid, Spain

来源：

VACUUM | 2008年 / 82卷 / 06期

关键词：

sputtering; zinc oxide; electrical properties; optical properties;

D O I：

10.1016/j.vacuum.2007.10.013

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Aluminium-doped zinc oxide (AZO) thin films have been prepared by pulsed magnetron sputtering from a ceramic oxide target in pure argon atmosphere. Sputtering processes were performed in current or voltage regulation modes at different pulsing frequencies up to 200 kHz. Several growth parameters (discharge power, substrate temperature and growth rate) as well as AZO film properties (crystalline structure, optical transmittance and electrical characteristics) have been measured and analysed as a function of the current or voltage applied, the pulsing frequency and the operation time. By adjusting these deposition parameters, AZO layers with resistivity as low as 1.0 x 10(-3) Omega cm and average visible transmittance above 85% have been obtained at growth rate in the range 70-80 nm/min, at substrate temperatures below 150 degrees C. (c) 2007 Elsevier Ltd. All rights reserved.

引用

页码：668 / 672

页数：5

共 23 条

[1] Optimization of the electrical properties of magnetron sputtered aluminum-doped zinc oxide films for opto-electronic applications [J].