Nanocrystal-Embedded-Insulator Ferroelectric Negative Capacitance FETs With Sub-kT/q Swing

被引：23

作者：

Peng, Yue ^{[1
]}

Xiao, Wenwu ^{[1
,2
]}

Han, Genquan ^{[1
]}

Wu, Jibao ^{[1
]}

Liu, Huan ^{[1
]}

Liu, Yan ^{[1
]}

Xu, Nuo ^{[3
]}

Liu, Tsu-Jae King ^{[3
]}

Hao, Yue ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond T, Xian 710071, Shaanxi, Peoples R China

[2] Xiangtan Univ, Sch Mat Sci & Engn, Xiangtan 411105, Peoples R China

[3] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2019年 / 40卷 / 01期

基金：

中国国家自然科学基金;

关键词：

Ferroelectric; nanocrystal; negative capacitance; FET; PFETS;

D O I：

10.1109/LED.2018.2881839

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel nanocrystal-embedded-insulator (NEI) ferroelectric negative capacitance field-effect transistor (NCFET) is proposed and demonstrated. The NEI layer comprises orthorhombic ZrO2 nanocrystals embedded in amorphous Al2O3, as confirmed by high-resolution scanning transmission electron microscopy and diffraction analysis. The ferroelectric nature of NEI is proved by polarization-voltage measurements, piezoresponse force microscopy, and electrical measurements. The NEI NCFET achieves superior subthreshold swing (SS) and drive current compared with a control MOSFET with the same Al2O3 gate insulator thickness. Sub-60-mV/decade SS is also maintained through multiple DC sweeping cycles.

引用

页码：9 / 12

页数：4

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