NiO nanosheet/GaN heterojunction self-powered ultraviolet photodetector grown by a solution method

被引：21
作者：
Yu, Naisen [1 ,2 ]
Li, Haiou [2 ]
Qi, Yan [1 ]
机构：
[1] Dalian Nationalities Univ, Sch Phys & Mat Engn, Liaoning Key Lab Optoelect Films & Mat, Dalian 116600, Peoples R China
[2] Guilin Univ Elect Technol, Guangxi Key Lab Precis Nav Technol & Applicat, Guilin 541004, Peoples R China
来源：
OPTICAL MATERIALS EXPRESS | 2019年 / 9卷 / 01期
基金：
中国国家自然科学基金;
关键词：
CORE/SHELL NANOROD ARRAYS; SIMPLE FABRICATION; UV-PHOTODETECTOR; GAN; PHOTOCONDUCTIVITY; ELECTRODE; DETECTOR; FILM;
D O I：
10.1364/OME.9.000026
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A self-powered ultraviolet (UV) photodetector (PD) based two-dimensional NiO nanostructure and GaN film was fabricated using a low-temperature aqueous method. The heterostructure exhibited a prominent performance for UV detection response with self powered properties. The results showed the NiO nanosheet/GaN heterojunction structure can simultaneously enhance the surface area and promote the charge transport. Furthermore, it provides a facile route for the growth of a NiO nanosheet/GaN heterostructure for low cost UV detector applications at remarkably low temperatures. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
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页码：26 / 34
页数：9
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