NiO nanosheet/GaN heterojunction self-powered ultraviolet photodetector grown by a solution method

被引:21
作者
Yu, Naisen [1 ,2 ]
Li, Haiou [2 ]
Qi, Yan [1 ]
机构
[1] Dalian Nationalities Univ, Sch Phys & Mat Engn, Liaoning Key Lab Optoelect Films & Mat, Dalian 116600, Peoples R China
[2] Guilin Univ Elect Technol, Guangxi Key Lab Precis Nav Technol & Applicat, Guilin 541004, Peoples R China
来源
OPTICAL MATERIALS EXPRESS | 2019年 / 9卷 / 01期
基金
中国国家自然科学基金;
关键词
CORE/SHELL NANOROD ARRAYS; SIMPLE FABRICATION; UV-PHOTODETECTOR; GAN; PHOTOCONDUCTIVITY; ELECTRODE; DETECTOR; FILM;
D O I
10.1364/OME.9.000026
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A self-powered ultraviolet (UV) photodetector (PD) based two-dimensional NiO nanostructure and GaN film was fabricated using a low-temperature aqueous method. The heterostructure exhibited a prominent performance for UV detection response with self powered properties. The results showed the NiO nanosheet/GaN heterojunction structure can simultaneously enhance the surface area and promote the charge transport. Furthermore, it provides a facile route for the growth of a NiO nanosheet/GaN heterostructure for low cost UV detector applications at remarkably low temperatures. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
引用
收藏
页码:26 / 34
页数:9
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