Optical characterization of chalcogenide thin films

被引：30

作者：

Franta, D

Ohlídal, I

Frumar, M

Jedelsky, J

机构：

[1] Masaryk Univ, Fac Sci, Dept Phys Elect, CS-61137 Brno, Czech Republic

[2] Univ Pardubice, Fac Chem Technol, Dept Gen & Inorgan Chem, Pardubice 53210, Czech Republic

来源：

APPLIED SURFACE SCIENCE | 2001年 / 175卷 / 175-176期

关键词：

chalcogenide films; dispersion model; ellipsometry; reflectometry;

D O I：

10.1016/S0169-4332(01)00148-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this paper, the optical characterization of a film of amorphous As-S chalcogenides evaporated on glass substrates will be performed using variable angle of incidence spectroscopic ellipsometry (VASE) and near-normal incidence spectroscopic reflectometry (NNSR), The spectral dependences of the ellipsometric parameters and reflectance of the chalcogenide thin film mentioned is measured within the near-UV, visible and near-IR spectral regions, For interpreting these optical quantities the new dispersion model of the spectral dependences of the optical constants of amorphous solids is employed. This model is based on the modified Lorentz oscillator. Within this model the concepts of the band gap and Urbach tail are respected. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：555 / 561

页数：7

共 15 条

[1] OPTICAL DISPERSION-RELATIONS FOR AMORPHOUS-SEMICONDUCTORS AND AMORPHOUS DIELECTRICS [J].