Magnetic relaxation in thin Co films with in-plane magnetization

被引：10

作者：

Boukari, S ^{[1
]}

Allenspach, R ^{[1
]}

Bischof, A ^{[1
]}

机构：

[1] IBM Corp, Div Res, Zurich Res Lab, CH-8803 Ruschlikon, Switzerland

来源：

PHYSICAL REVIEW B | 2001年 / 63卷 / 18期

关键词：

D O I：

10.1103/PhysRevB.63.180402

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Magnetic relaxation along two nonequivalent axes has been investigated in Co films on stepped Cu(001) by magneto-optical Kerr effect and correlated to magnetic domain patterns and structural defects by spin-polarized scanning electron microscopy. The results show that nucleation is dominated by anisotropy rather than magnetostatics. Domain wall velocity is not constant for a given held. but depends on the initial state of the system.

引用

页数：4

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