Yttrium-doped barium zirconate (BZY) is the most promising candidate for proton-conducting ceramics and has been extensively studied in recent years. The detailed features of the crystal structure, both short-range and long-range, as well as the crystal chemistry driving the doping process, are largely unknown. We use very high resolution X-ray diffraction (HR-XRD) to resolve the crystal structure, which is very slightly tetragonally distorted in BZY, while the local environment around Zr4+ and Y3+ is probed with extended X-ray absorption fine structure (EXAFS), and the symmetry and vibrations are investigated by using Raman spectroscopy. It is found that barium zirconate shows some degree of local deviation from the cubic arystotype even if undoped, which upon substitution by the perceptibly larger Y3+, playing the role of a rigid inclusion, is further increased. This distortion is one limiting factor concerning the Y3+ solubility. The effects are correlated to the proton conduction properties of BZY.
机构:
Inst High Performance Comp, Mat Theory & Simulat Lab, Singapore 138632, SingaporeInst High Performance Comp, Mat Theory & Simulat Lab, Singapore 138632, Singapore
Bilic, Ante
Gale, Julian D.
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Curtin Univ Technol, Nanochem Res Inst, Dept Appl Chem, Perth, WA 6845, AustraliaInst High Performance Comp, Mat Theory & Simulat Lab, Singapore 138632, Singapore
机构:
Inst Natl Polytech Grenoble, CNRS, Lab Electrochim & Physicochim Mat & Interfaces, F-38402 St Martin Dheres, FranceInst Natl Polytech Grenoble, CNRS, Lab Electrochim & Physicochim Mat & Interfaces, F-38402 St Martin Dheres, France
Charrier-Cougoulic, I
Pagnier, T
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Inst Natl Polytech Grenoble, CNRS, Lab Electrochim & Physicochim Mat & Interfaces, F-38402 St Martin Dheres, FranceInst Natl Polytech Grenoble, CNRS, Lab Electrochim & Physicochim Mat & Interfaces, F-38402 St Martin Dheres, France
Pagnier, T
Lucazeau, G
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Inst Natl Polytech Grenoble, CNRS, Lab Electrochim & Physicochim Mat & Interfaces, F-38402 St Martin Dheres, FranceInst Natl Polytech Grenoble, CNRS, Lab Electrochim & Physicochim Mat & Interfaces, F-38402 St Martin Dheres, France
机构:
Inst High Performance Comp, Mat Theory & Simulat Lab, Singapore 138632, SingaporeInst High Performance Comp, Mat Theory & Simulat Lab, Singapore 138632, Singapore
Bilic, Ante
Gale, Julian D.
论文数: 0引用数: 0
h-index: 0
机构:
Curtin Univ Technol, Nanochem Res Inst, Dept Appl Chem, Perth, WA 6845, AustraliaInst High Performance Comp, Mat Theory & Simulat Lab, Singapore 138632, Singapore
机构:
Inst Natl Polytech Grenoble, CNRS, Lab Electrochim & Physicochim Mat & Interfaces, F-38402 St Martin Dheres, FranceInst Natl Polytech Grenoble, CNRS, Lab Electrochim & Physicochim Mat & Interfaces, F-38402 St Martin Dheres, France
Charrier-Cougoulic, I
Pagnier, T
论文数: 0引用数: 0
h-index: 0
机构:
Inst Natl Polytech Grenoble, CNRS, Lab Electrochim & Physicochim Mat & Interfaces, F-38402 St Martin Dheres, FranceInst Natl Polytech Grenoble, CNRS, Lab Electrochim & Physicochim Mat & Interfaces, F-38402 St Martin Dheres, France
Pagnier, T
Lucazeau, G
论文数: 0引用数: 0
h-index: 0
机构:
Inst Natl Polytech Grenoble, CNRS, Lab Electrochim & Physicochim Mat & Interfaces, F-38402 St Martin Dheres, FranceInst Natl Polytech Grenoble, CNRS, Lab Electrochim & Physicochim Mat & Interfaces, F-38402 St Martin Dheres, France