Reliability Assessment of AlGaN/GaN Schottky Barrier Diodes Under ON-State Stress

被引：10

作者：

Acurio, Eliana ^{[1
]}

Trojman, Lionel ^{[2
]}

Crupi, Felice ^{[3
]}

Moposita, Tatiana ^{[4
]}

De Jaeger, Brice ^{[5
]}

Decoutere, Stefaan ^{[5
]}

机构：

[1] Escuela Politec Nacl, Dept Phys, Quito 170525, Ecuador

[2] ISEP, Lisite, F-75006 Paris, France

[3] Univ Calabria, Dept Comp Engn Modeling Elect & Syst Engn DIMES, I-87036 Arcavacata Di Rende, Italy

[4] Univ San Francisco Quito, Inst Micro & Nanoelect, Quito 07032, Ecuador

[5] IMEC, PMST, B-3001 Leuven, Belgium

来源：

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 2020年 / 20卷 / 01期

关键词：

Stress; Degradation; Schottky barriers; Schottky diodes; Semiconductor device reliability; Temperature measurement; AlGaN; GaN SBD; extrinsic; GET; intrinsic; lifetime; ON-state; reliability; GAN; IMPACT;

D O I：

10.1109/TDMR.2020.2969638

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This article aims to study the degradation of Schottky Barrier Diodes (SBDs) with a Gated Edge Termination (GET) under ON-state stress conditions. After all the stress experiments a recoverable behavior is observed, which indicates charge trapping in pre-existing defects and no creation of new traps. A broad statistical analysis demonstrates better reliability and a longer lifetime compared to previous works in a 200-V technology. Some systematic differences in parameter degradation are observed depending on wafer location, likely caused by process-related variations. By using matched pairs (MPs) technique, we have demonstrated that probability distributions characterized by single Weibull slopes can be obtained over the wafer that could allow better characterization of the intrinsic reliability of these devices.

引用

页码：167 / 171

页数：5

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