ZnO epitaxy on (111) Si using epitaxial Lu2O3 buffer layers

被引：40

作者：

Guo, W. ^{[1
]}

Allenic, A. ^{[1
]}

Chen, Y. B. ^{[1
]}

Pan, X. Q. ^{[1
]}

Tian, W. ^{[2
]}

Adamo, C. ^{[2
]}

Schlom, D. G. ^{[2
]}

机构：

[1] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA

[2] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 07期

基金：

美国国家科学基金会; 中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2841667

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the growth and characterization of single-crystalline, crack-free, epitaxial (0001) ZnO films on (111) Si substrates using intervening epitaxial Lu(2)O(3) buffer layers. The epitaxial orientation relationships are (0001)(ZnO)parallel to(111)(Lu2)O(3)parallel to(111)(Si) and [1 (2) over bar 10](ZnO)parallel to[(1) over bar 10](Lu2)O(3)parallel to[1 (1) over bar0](Si). X-ray diffraction and transmission electron microscopy reveal that the ZnO films have high structural quality and an atomically sharp ZnO/Lu(2)O(3) interface. Temperature-dependent photoluminescence measurements show optical properties comparable to ZnO single crystals. The films have a resistivity of 0.31 Omega cm, an electron concentration of 2.5x10(17) cm(-3), and a mobility of 80 cm(2)/V center dot s at room temperature. The epitaxial growth of ZnO on Si represents a significant step toward the integration of ZnO-based multifunctional devices with Si electronics. (C) 2008 American Institute of Physics.

引用

页数：3

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