Calculations of codoping effects between combinations of donors (P/As/Sb) and acceptors (B/Ga/In) in Si

被引:3
作者
Ahn, Chihak [1 ]
Dunham, Scott T. [2 ]
机构
[1] Univ Washington, Dept Phys, Seattle, WA 98195 USA
[2] Univ Washington, Dept Elect Engn, Seattle, WA 98195 USA
关键词
D O I
10.1063/1.2824942
中图分类号
O59 [应用物理学];
学科分类号
摘要
We studied codoping effects in silicon using first-principles calculations, with particular attention to charge compensation, Coulomb interactions, and strain compensation. We find that for B-doped systems, As or Sb counter doping reduces the maximum hole concentration, but that due to strong binding of multiple P atoms, Ga or In counter doping can increase electron density in heavily P-doped material. For acceptor-acceptor pairing, we find the B-B interaction to be repulsive as expected due to Coulombic effects, but calculations show a surprisingly significant attractive binding between B and In, which we attribute to hole localization. However, B-In binding is not promising for enhancing hole concentration since BIn pairs are deep acceptors. (c) 2007 American Institute of Physics.
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页数:5
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