Induced valley splitting in monolayer MoS2 by an antiferromagnetic insulating CoO(111) substrate

被引：47

作者：

Yang, Guang ^{[1
]}

Li, Jia ^{[1
,2
]}

Ma, Hongran ^{[1
]}

Yang, Yanmin ^{[1
]}

Li, Congcong ^{[1
]}

Mao, Xiujuan ^{[1
]}

Yin, Fuxing ^{[2
]}

机构：

[1] Hebei Univ Technol, Sch Sci, Tianjin 300401, Peoples R China

[2] Hebei Univ Technol, Res Inst Energy Equipment Mat, Tianjin 300401, Peoples R China

来源：

PHYSICAL REVIEW B | 2018年 / 98卷 / 23期

基金：

中国博士后科学基金; 中国国家自然科学基金;

关键词：

ELECTRONIC-STRUCTURE; BERRY PHASE; POLARIZATION; PSEUDOPOTENTIALS; LAYER; WSE2; SPIN;

D O I：

10.1103/PhysRevB.98.235419

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The valleytronic properties in monolayer MoS2 induced by the magnetic proximity effect of an antiferromagnetic CoO(111) substrate have been investigated using density functional theory and Berry curvature calculations. The results show that monolayer MoS2 can achieve a large valley splitting of 103 meV when coupled to an antiferromagnetic insulating CoO(111) substrate, which is in a robust type-II antiferromagnetic state at room temperature. The substrate provides a Zeeman field of 152 T. Breaking of the time-reversal symmetry of monolayer MoS2 leads to a prominent anomalous Hall conductivity that has a quantized character in the range of the band edge at the K and K' valleys. Based on the result that the valley-contrasting Berry curvature is opposite at the K and K' valleys, a valleytronic device that can be used as a filter for both the valley and spin is proposed.

引用

页数：9

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