High-index Cu2O (113) film on faceted MgO (110) by molecular beam epitaxy

被引：3

作者：

Huo, Wenxing ^{[1
,2
]}

Shi, Jin'an ^{[3
]}

Mei, Zengxia ^{[2
]}

Liu, Lishu ^{[2
]}

Li, Junqiang ^{[2
]}

Gu, Lin ^{[3
]}

Du, Xiaolong ^{[2
]}

Xue, Qikun ^{[1
,4
]}

机构：

[1] Beijing Univ Posts & Telecommun, Sch Elect Engn, Beijing 100876, Peoples R China

[2] Chinese Acad Sci, Inst Phys, Key Lab Renewable Energy, Beijing 100190, Peoples R China

[3] Chinese Acad Sci, Inst Phys, Key Lab Adv Mat & Electron Microscopy, Beijing 100190, Peoples R China

[4] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2015年 / 420卷

基金：

中国国家自然科学基金;

关键词：

Crystal structure; Reflection high-energy electron diffraction; Molecular beam epitaxy; Oxides; Semiconducting materials; CHEMICAL-VAPOR-DEPOSITION; CUPROUS-OXIDE FILMS; THIN-FILMS; ELECTRICAL-PROPERTIES; GROWTH; SUBSTRATE; MGO(110);

D O I：

10.1016/j.jcrysgro.2015.03.021

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report the growth of single-oriented Cu2O (113) film on faceted MgO (110) substrate by radio-frequency plasma assisted molecular beam epitaxy. A MgO {100} faceted homoepitaxial layer was introduced beforehand as a template for epitaxy of Cu2O film. The epitaxial relationship is determined to be Cu2O (113)//MGO(110) with a tilt angle of 4.76 degrees and Cu2O -[1 (1) over bar1]//MgO [1 (1) over bar0] by the combined study of in-situ reflection high-energy electron diffraction and ex-situ X-ray diffraction and transmission electron microscopy. The film demonstrates a good p-type conductivity and excellent optical properties, indicating that this unique approach is potentially applicable for high-index film preparation and device applications. Crown Copyright (C) 2015 Published by Elsevier B.V. All rights reserved.

引用

页码：32 / 36

页数：5

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