Intersubband spectroscopy of doped and undoped GaN/AlN quantum wells grown by molecular-beam epitaxy

被引:77
作者
Helman, A
Tchernycheva, M
Lusson, A
Warde, E
Julien, FH
Moumanis, K
Fishman, G
Monroy, E
Daudin, B
Dang, DL
Bellet-Amalric, E
Jalabert, D
机构
[1] Univ Paris 11, Inst Elect Fondamentale, CNRS, UMR 8622, F-91405 Orsay, France
[2] CEA Grenoble, CNRS, SP2M, F-38054 Grenoble 9, France
关键词
D O I
10.1063/1.1635985
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report experimental and theoretical results on interband and intersubband transitions in GaN quantum wells with strained AlN barriers. All of the samples are grown by molecular-beam epitaxy on sapphire (0001) substrates. The results show that even at room temperature, strong electron localization occurs in the plane of the quantum wells due to the combined effect of monolayer thickness fluctuations and the high internal field in the GaN layers. We also demonstrate that the intersubband absorption is systematically blueshifted in n-doped quantum wells with respect to nominally undoped samples as a result of strong many-body effects, namely the exchange interaction. The results for both undoped and doped quantum wells are in good agreement with simulations. (C) 2003 American Institute of Physics.
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收藏
页码:5196 / 5198
页数:3
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