Charge accumulation dynamics in organic thin film transistors

被引：8

作者：

Chen, X. Y. ^{[1
]}

Zhu, H. ^{[1
]}

Wang, S. D. ^{[1
]}

机构：

[1] Soochow Univ, Inst Funct Nano & Soft Mat FUNSOM, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Suzhou 215123, Jiangsu, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 24期

基金：

中国国家自然科学基金;

关键词：

FIELD-EFFECT TRANSISTORS;

D O I：

10.1063/1.3526374

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have developed a transient current model to quantitatively describe the charge accumulation dynamics in organic thin film transistors. This model indicates that the charge accumulation process is faster at higher gate bias and/or higher field-effect mobility, and the experimental results are consistent with the theoretical expectations. A strong gate bias dependence of the field-effect mobility is observed, which suggests that the charge traps in the charge accumulation layer may limit the device performance not only at steady state but also at transient state. (C) 2010 American Institute of Physics. [doi:10.1063/1.3526374]

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页数：3

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