Role of charged defects and impurities in kinetics of hydrogen storage materials: A first-principles study

被引:94
作者
Peles, Amra [1 ]
Van de Walle, Chris G. [1 ]
机构
[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
关键词
D O I
10.1103/PhysRevB.76.214101
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We identify hydrogen-related point defects as a dominant defect species involved in (de)hydrogenation of sodium alanate, a viable hydrogen storage material. These defects are positively or negatively charged, and hence their formation energies are Fermi-level dependent-an important feature that has not been recognized in past studies. This dependence enables us to explain why small amounts of transition-metal additives drastically alter the kinetics of dehydrogenation. The rate-limiting step for hydrogen release is the creation of charged hydrogen-related defects, while transition-metal additives act as electrically active impurities that lower the formation energy of these defects.
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页数:5
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