The contribution of the exchange biased field direction in multilayer thin films to planar Hall resistance

被引:10
作者
Hung, Tran Quang [1 ]
Quang, Pham Hong [2 ]
Thanhl, Nguyen Trung [1 ]
Sunjong, Oh [1 ]
Bajaj, Bharat [1 ]
CheolGi, Kim [1 ]
机构
[1] Chungnam Natl Univ, Dept Mat Sci & Engn, Taejon 305764, South Korea
[2] Hanoi Univ Sci, Cryogen Lab, Hanoi, Vietnam
来源
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2007年 / 244卷 / 12期
关键词
D O I
10.1002/pssb.200777309
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Recently, planar Hall effect (PHE) has been widely pursued due to its application potential for biosensors. Planar Hall sensor is based on the anisotropy magnetoresistance and exhibits many advantages, such as large signal-to-noise ratio at low frequencies and high sensitivity at low applied field. The planar Hall resistance (PHR) curve in multilayer thin films with spinvalve structure has pre-eminent sensitivity when compared to single layer and bilayer thin films. In this work, we report a model for PHR calculation that includes the behaviour of single domain basic structure in the external magnetic field. Our results show a qualitative dependence between PHR curves and the angle (beta) between the exchange biased field direction and the easy axis of the free layer. As the beta increases the sensitivity of the PHR curves also increases. Further, it is shown that our calculation helps to determine the exchange biased field direction. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码:4431 / 4434
页数:4
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