Transmission electron microscopical studies of the layered structure of the ternary semiconductor CuIn5Se8

被引：0

作者：

Tham, AT

Su, DS

Neumann, W

Schubert-Bischoff, P

Beilharz, C

Benz, KW

机构：

[1] Humboldt Univ, Inst Phys, Chair Crystallog, D-10115 Berlin, Germany

[2] Max Planck Soc, Fritz Haber Inst, D-14195 Berlin, Germany

[3] Hahn Meitner Inst Kernforsch Berlin GmbH, D-14109 Berlin, Germany

[4] Univ Freiburg, Inst Crystallog, D-79108 Freiburg, Germany

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 2001年 / 36卷 / 03期

关键词：

TEM; CuInSe; layer;

D O I：

10.1002/1521-4079(200103)36:3<303::AID-CRAT303>3.3.CO;2-O

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The structure of the off-stoichiometric In-rich ternary phase CuIn5Se8 was studied by means of electron diffraction and high-resolution electron microscopy. The compound shows a layered structure with a 7-layer stacking sequence of closed-packed planes, which contains both cubit: and hexagonal stacking of Se atoms. The studied CuIn5Se8 bulk crystal is known as the beta -phase of this compound.

引用

页码：303 / 308

页数：6