Mask Inspection Technologies for 22nm HP and beyond

被引：2

作者：

Wack, Daniel ^{[1
]}

Zhang, Qiang Q. ^{[1
]}

Inderhees, Gregg ^{[1
]}

Lopez, Dan ^{[1
]}

机构：

[1] KLA Tencor, Milpitas, CA 95035 USA

来源：

EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY | 2010年 / 7636卷

关键词：

Mask Inspection; EUV Lithography; EUVL MASK;

D O I：

10.1117/12.850766

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Reticle quality and the capability to qualify a reticle are key issues for EUV Lithography. We expect current and planned optical inspection systems will provide inspection capability adequate for development and production of 2X HP masks. We illustrate inspection technology extendibility through simulation of 193nm-based inspection of advanced EUV patterned masks. The influence of EUV absorber design for 193nm optical contrast and defect sensitivity will be identified for absorber designs of current interest.

引用

页数：9

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