Magnetically soft and high-saturation-magnetization FeCo films fabricated by co-sputtering
被引:14
作者:
Fu, Y
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机构:
Lanzhou Univ, Res Inst Magnetism & Magnet Mat, Lanzhou 730000, Peoples R ChinaLanzhou Univ, Res Inst Magnetism & Magnet Mat, Lanzhou 730000, Peoples R China
Fu, Y
[1
]
Cheng, XF
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Lanzhou Univ, Res Inst Magnetism & Magnet Mat, Lanzhou 730000, Peoples R ChinaLanzhou Univ, Res Inst Magnetism & Magnet Mat, Lanzhou 730000, Peoples R China
Cheng, XF
[1
]
Yang, Z
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Lanzhou Univ, Res Inst Magnetism & Magnet Mat, Lanzhou 730000, Peoples R ChinaLanzhou Univ, Res Inst Magnetism & Magnet Mat, Lanzhou 730000, Peoples R China
Yang, Z
[1
]
机构:
[1] Lanzhou Univ, Res Inst Magnetism & Magnet Mat, Lanzhou 730000, Peoples R China
来源:
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
|
2005年
/
202卷
/
06期
关键词:
D O I:
10.1002/pssa.200420014
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
Magnetically soft FeCo films with high saturation magnetization were successfully obtained by co-sputtering Fe65CO35 films onto a very thin Co93Fe7 seed layer, The coercivity of single FeCo films on the substrate was markedly reduced by increasing the deposition temperature and appropriately selecting the composition. The effect of composition and thickness of a high-Co-conecentration Co-100, Fe, (0 <= y <= 11) seed layer on the magnetic properties and structure of Co-100, Fe, (0-10 nm)/Fe65Co35 (100 nm) films was studied. It was observed that the texture of Fe65Co35 films changed from ( 110) to (200) on using a Co,Fe, seed layer. The appearance of (200) texture and film growth with less lattice strain improved the soft magnetic properties of FeCo films. A double-layer Co93Fe7 (1 nm)/Fe65Co35 (100 nm) film was obtained with saturation magnetization mu M-0 = 2.4 T, easy-axis cocreivity 1 kA/m, hard-axis cocreivity H-ch = 0.2 kA/m and anisotropy field H-K = 6.4 kA/m. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA. Weinheim.
机构:
Key Laboratory of Ministry of Education for High Temperature Materials and Tests, School of Materials Science and Engineering, Shanghai Jiao Tong UniversityKey Laboratory of Ministry of Education for High Temperature Materials and Tests, School of Materials Science and Engineering, Shanghai Jiao Tong University
Zhang B.
Xu X.-F.
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机构:
College of Science, Donghua UniversityKey Laboratory of Ministry of Education for High Temperature Materials and Tests, School of Materials Science and Engineering, Shanghai Jiao Tong University
Xu X.-F.
Dong X.-P.
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机构:
Key Laboratory of Ministry of Education for High Temperature Materials and Tests, School of Materials Science and Engineering, Shanghai Jiao Tong UniversityKey Laboratory of Ministry of Education for High Temperature Materials and Tests, School of Materials Science and Engineering, Shanghai Jiao Tong University
Dong X.-P.
Wu J.-S.
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机构:
Key Laboratory of Ministry of Education for High Temperature Materials and Tests, School of Materials Science and Engineering, Shanghai Jiao Tong UniversityKey Laboratory of Ministry of Education for High Temperature Materials and Tests, School of Materials Science and Engineering, Shanghai Jiao Tong University
机构:
Univ Nacl Autonoma Mexico, Inst Fis, Apartado Postal 20-364, Mexico City 01000, DF, Mexico
Univ Nacl Autonoma Mexico, Inst Invest Mat, AP 70-360, Mexico City, DF, MexicoUniv Nacl Autonoma Mexico, Inst Fis, Apartado Postal 20-364, Mexico City 01000, DF, Mexico
Cruz, J.
Andrade, E.
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Univ Nacl Autonoma Mexico, Inst Fis, Apartado Postal 20-364, Mexico City 01000, DF, MexicoUniv Nacl Autonoma Mexico, Inst Fis, Apartado Postal 20-364, Mexico City 01000, DF, Mexico
Andrade, E.
Muhl, S.
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Univ Nacl Autonoma Mexico, Inst Invest Mat, AP 70-360, Mexico City, DF, MexicoUniv Nacl Autonoma Mexico, Inst Fis, Apartado Postal 20-364, Mexico City 01000, DF, Mexico
Muhl, S.
Canto, C.
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Univ Nacl Autonoma Mexico, Inst Fis, Apartado Postal 20-364, Mexico City 01000, DF, MexicoUniv Nacl Autonoma Mexico, Inst Fis, Apartado Postal 20-364, Mexico City 01000, DF, Mexico
Canto, C.
de Lucio, O.
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Univ Nacl Autonoma Mexico, Inst Fis, Apartado Postal 20-364, Mexico City 01000, DF, MexicoUniv Nacl Autonoma Mexico, Inst Fis, Apartado Postal 20-364, Mexico City 01000, DF, Mexico
de Lucio, O.
Chavez, E.
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Univ Nacl Autonoma Mexico, Inst Fis, Apartado Postal 20-364, Mexico City 01000, DF, MexicoUniv Nacl Autonoma Mexico, Inst Fis, Apartado Postal 20-364, Mexico City 01000, DF, Mexico
Chavez, E.
Rocha, M. F.
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机构:
Inst Politecn Nacl, ESIME Z, ALM Zacatenco, Mexico City 07738, DF, MexicoUniv Nacl Autonoma Mexico, Inst Fis, Apartado Postal 20-364, Mexico City 01000, DF, Mexico
Rocha, M. F.
Garces-Medina, E.
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Univ Nacl Autonoma Mexico, Fac Ciencias, Lab Dinam Lineal, AP 70-360, Mexico City, DF, MexicoUniv Nacl Autonoma Mexico, Inst Fis, Apartado Postal 20-364, Mexico City 01000, DF, Mexico
机构:
Indian Inst Technol Delhi, Dept Phys, Thin Film Lab, New Delhi 110016, IndiaIndian Inst Technol Delhi, Dept Phys, Thin Film Lab, New Delhi 110016, India
Singh, Anil
Chaudhary, Sujeet
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机构:
Indian Inst Technol Delhi, Dept Phys, Thin Film Lab, New Delhi 110016, IndiaIndian Inst Technol Delhi, Dept Phys, Thin Film Lab, New Delhi 110016, India
Chaudhary, Sujeet
Pandya, D. K.
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Indian Inst Technol Delhi, Dept Phys, Thin Film Lab, New Delhi 110016, IndiaIndian Inst Technol Delhi, Dept Phys, Thin Film Lab, New Delhi 110016, India