Fabrication and characteristics of InAs/GaSb Type-II superlattice infrared detector pixel mesas

被引：0

作者：

Cui Yu-Rong ^{[1
,2
]}

Xu Zhi-Chang ^{[1
]}

Huang Min ^{[1
]}

Xu Jia-Jia ^{[1
]}

Chen Jian-Xin ^{[1
,2
]}

He Li ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Key Lab Infrared Imaging Mat & Detectors, Shanghai 200083, Peoples R China

[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

来源：

JOURNAL OF INFRARED AND MILLIMETER WAVES | 2021年 / 40卷 / 04期

基金：

国家重点研发计划; 中国国家自然科学基金;

关键词：

Type-II superlattice; rapid thermal annealing; gate-control structure; X-ray photoelectron spectroscopy; OXIDE-SUBSTRATE; FILMS; GASB;

D O I：

10.11972/j.issn.1001-9014.2021.04.001

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The surface leakage current and thermal stability of the infrared detector are highly related to the sidewall surface of the mesa. This work focused on researching the sidewalls' properties of InAs/GaSb type-II superlattice middle-wavelength infrared detectors by gate-control techniques. It was found the I-V curves for samples with or without annealing showed significant difference at 80 K, and the dark current density of the annealing sample increased from 2. 17x10(-)(7)A/cm(2) to 6. 96x10(-5) A/cm(2) comparing with the sample without annealing at the bias of -0.05 V. The results of gate-control experiment proved the surface fixed charge was increased by 2. 76x10(12) cm(-2) after annealing, which caused severe surface tunneling leakage. And the XPS showed the elemental Sb increased after annealing.

引用

页码：427 / 431

页数：5

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