Growth of strontium ruthenate films by hybrid molecular beam epitaxy

被引：14

作者：

Marshall, Patrick B. ^{[1
]}

Kim, Honggyu ^{[1
]}

Ahadi, Kaveh ^{[1
]}

Stemmer, Susanne ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Mat Dept, Santa Barbara, CA 93106 USA

来源：

APL MATERIALS | 2017年 / 5卷 / 09期

关键词：

SRTIO3; FILMS; THIN-FILMS; SR2RUO4; SUPERCONDUCTIVITY; PEROVSKITE; DEPOSITION; PHYSICS;

D O I：

10.1063/1.4998772

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report on the growth of epitaxial Sr2RuO4 films using a hybrid molecular beam epitaxy approach in which a volatile precursor containing RuO4 is used to supply ruthenium and oxygen. The use of the precursor overcomes a number of issues encountered in traditional molecular beam epitaxy that uses elemental metal sources. Phase-pure, epitaxial thin films of Sr2RuO4 are obtained. At high substrate temperatures, growth proceeds in a layer-by-layer mode with intensity oscillations observed in reflection high-energy electron diffraction. Films are of high structural quality, as documented by x-ray diffraction, atomic force microscopy, and transmission electron microscopy. The method should be suitable for the growth of other complex oxides containing ruthenium, opening up opportunities to investigate thin films that host rich exotic ground states. (C) 2017 Author(s).

引用

页数：6

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