Nanoscale Strainability of Graphene by Laser Shock-Induced Three-Dimensional Shaping

被引:50
作者
Li, Ji [1 ,2 ]
Chung, Ting-Fung [1 ,4 ]
Chen, Yong P. [1 ,3 ,4 ]
Cheng, Gary J. [1 ,2 ]
机构
[1] Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
[2] Purdue Univ, Sch Ind Engn, W Lafayette, IN 47907 USA
[3] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
[4] Purdue Univ, Dept Phys, W Lafayette, IN 47907 USA
基金
美国国家科学基金会;
关键词
Laser shock-induced straining; 3D nano shaping; graphene; strainability; STRENGTH;
D O I
10.1021/nl301817t
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Graphene has many promising physical properties. It has been discovered that local strain in a graphene sheet can alter its conducting properties and transport gaps. It is of great importance to develop scalable strain engineering techniques to control the local strains in graphene and understand the limit of the strains. Here, we present a scalable manufacturing process to generate three-dimensional (3D) nanostructures and thus induce local strains in the graphene sheet. This process utilizes laser-induced shock pressure to generate 3D tunable straining in the graphene sheet. The size dependent straining limit of the graphene and the critical breaking pressure are both studied. It is found that the graphene film can be formed to a circular mold (similar to 50 nm in diameter) with an aspect ratio of 0.25 and strain of 12%, and the critical breaking pressure is 1.77 GPa. These values were found to be decreasing with the increase of mold size. The local straining and breaking of graphene film are verified by Raman spectra. Large scale processing of the graphene sheet into nanoscale patterns is presented. The process could be scaled up to roll-to-roll process by changing laser beam size and scanning speed. The presented laser shock straining approach is a fast, tunable, and low-cost technique to realize strain engineering of graphene for its applications in nanoelectrical devices.
引用
收藏
页码:4577 / 4583
页数:7
相关论文
共 23 条
  • [1] Electronic transport in chemical vapor deposited graphene synthesized on Cu: Quantum Hall effect and weak localization
    Cao, Helin
    Yu, Qingkai
    Jauregui, L. A.
    Tian, J.
    Wu, W.
    Liu, Z.
    Jalilian, R.
    Benjamin, D. K.
    Jiang, Z.
    Bao, J.
    Pei, S. S.
    Chen, Yong P.
    [J]. APPLIED PHYSICS LETTERS, 2010, 96 (12)
  • [2] Stretchable Graphene: A Close Look at Fundamental Parameters through Biaxial Straining
    Ding, Fei
    Ji, Hengxing
    Chen, Yonghai
    Herklotz, Andreas
    Doerr, Kathrin
    Mei, Yongfeng
    Rastelli, Armando
    Schmidt, Oliver G.
    [J]. NANO LETTERS, 2010, 10 (09) : 3453 - 3458
  • [3] PHYSICAL STUDY OF LASER-PRODUCED PLASMA IN CONFINED GEOMETRY
    FABBRO, R
    FOURNIER, J
    BALLARD, P
    DEVAUX, D
    VIRMONT, J
    [J]. JOURNAL OF APPLIED PHYSICS, 1990, 68 (02) : 775 - 784
  • [4] Raman spectrum of graphene and graphene layers
    Ferrari, A. C.
    Meyer, J. C.
    Scardaci, V.
    Casiraghi, C.
    Lazzeri, M.
    Mauri, F.
    Piscanec, S.
    Jiang, D.
    Novoselov, K. S.
    Roth, S.
    Geim, A. K.
    [J]. PHYSICAL REVIEW LETTERS, 2006, 97 (18)
  • [5] Gao H., 2009, T ASME J MANU SCI EN, V131
  • [6] The rise of graphene
    Geim, A. K.
    Novoselov, K. S.
    [J]. NATURE MATERIALS, 2007, 6 (03) : 183 - 191
  • [7] Band structure engineering of graphene by strain: First-principles calculations
    Gui, Gui
    Li, Jin
    Zhong, Jianxin
    [J]. PHYSICAL REVIEW B, 2008, 78 (07):
  • [8] Energy gaps and a zero-field quantum Hall effect in graphene by strain engineering
    Guinea, F.
    Katsnelson, M. I.
    Geim, A. K.
    [J]. NATURE PHYSICS, 2010, 6 (01) : 30 - 33
  • [9] Room-temperature ballistic transport in narrow graphene strips
    Gunlycke, D.
    Lawler, H. M.
    White, C. T.
    [J]. PHYSICAL REVIEW B, 2007, 75 (08)
  • [10] Energy band-gap engineering of graphene nanoribbons
    Han, Melinda Y.
    Oezyilmaz, Barbaros
    Zhang, Yuanbo
    Kim, Philip
    [J]. PHYSICAL REVIEW LETTERS, 2007, 98 (20)