Cavity Length Effect on Dynamic Characteristics of InGaAs/GaAs Quantum Dot Lasers

被引：0
|
作者：
Rajaei, Esfandiar [1 ]
Kariminezhad, Farzaneh [1 ]
机构：
[1] Univ Guilan, Dept Phys, Rasht, Guilan, Iran
来源：
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS | 2016年 / 11卷 / 06期
关键词：
Quantum Dot Laser; Small Signal Modulation Response; Cavity Length; HIGH-SPEED MODULATION; DENSITY-OF-STATES; SEMICONDUCTOR-LASERS; THRESHOLD CURRENT; ROOM-TEMPERATURE; WETTING LAYER; GAIN; CAPTURE; DEPENDENCE; EFFICIENCY;
D O I：
10.1166/jno.2016.1953
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we have investigated the effect of cavity length on the static and dynamic characteristics of InGaAs/GaAs quantum dot laser by considering excited state and upper states. To evaluate modulation response, an analytical solution has been used for rate equations. The cavity length effect on photon number, small signal and large signal modulation response for both ground and excited state has been investigated separately. The simulation results show a good compatibility for improvement of dynamic and static specifications of quantum dot laser.
引用
收藏
页码：685 / 693
页数：9
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