Low-voltage differentially-signaled modulators

被引：42

作者：

Zortman, William A. ^{[1
,2
]}

Lentine, Anthony L. ^{[1
]}

Trotter, Douglas C. ^{[1
]}

Watts, Michael R. ^{[1
,3
]}

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87185 USA

[2] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87185 USA

[3] MIT, Elect Res Lab, Cambridge, MA 02139 USA

来源：

OPTICS EXPRESS | 2011年 / 19卷 / 27期

基金：

美国能源部;

关键词：

HIGH-SPEED; SILICON; COMPACT;

D O I：

10.1364/OE.19.026017

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

For exascale computing applications, viable optical solutions will need to operate using low voltage signaling and with low power consumption. In this work, the first differentially signaled silicon resonator is demonstrated which can provide a 5dB extinction ratio using 3fJ/bit and 500mV signal amplitude at 10Gbps. Modulation with asymmetric voltage amplitudes as low as 150mV with 3dB extinction are demonstrated at 10Gbps as well. Differentially signaled resonators simplify and expand the design space for modulator implementation and require no special drivers. (C) 2011 Optical Society of America

引用

页码：26017 / 26026

页数：10

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