Comparative study of LaNiO3/LaAlO3 heterostructures grown by pulsed laser deposition and oxide molecular beam epitaxy

被引:30
|
作者
Wrobel, F. [1 ]
Mark, A. F. [1 ]
Christiani, G. [1 ]
Sigle, W. [1 ]
Habermeier, H. -U. [1 ]
van Aken, P. A. [1 ]
Logvenov, G. [1 ]
Keimer, B. [1 ]
Benckiser, E. [1 ]
机构
[1] Max Planck Inst Solid State Res, Heisenbergstr 1, D-70569 Stuttgart, Germany
关键词
D O I
10.1063/1.4975005
中图分类号
O59 [应用物理学];
学科分类号
摘要
Variations in growth conditions associated with different deposition techniques can greatly affect the phase stability and defect structure of complex oxide heterostructures. We synthesized superlattices of the paramagnetic metal LaNiO3 and the large band gap insulator LaAlO3 by atomic layer-by-layer molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) and compared their crystallinity and microstructure as revealed by high-resolution transmission electron microscopy images and resistivity. The MBE samples show a higher density of stacking faults but smoother interfaces and generally higher electrical conductivity. Our study identifies the opportunities and challenges of MBE and PLD growth and serves as a general guide for the choice of the deposition technique for perovskite oxides. Published by AIP Publishing.
引用
收藏
页数:5
相关论文
共 50 条
  • [41] Strain-Controlled Epitaxial Stabilization in Ultrathin LaNiO3 Films Grown by Pulsed Laser Deposition
    Moon, E. J.
    Gray, B. A.
    Pimpinelli, A.
    Kareev, M.
    Meyers, D.
    Chakhalian, J.
    CRYSTAL GROWTH & DESIGN, 2013, 13 (06) : 2256 - 2259
  • [42] A laser-ARPES study of LaNiO3 thin films grown by sputter deposition
    Cappelli, Edoardo
    Tromp, Willem O.
    Walker, Siobhan McKeown
    Tamai, Anna
    Gibert, Marta
    Baumberger, Felix
    Bruno, Flavio Y.
    APL MATERIALS, 2020, 8 (05)
  • [43] High-quality LaNiO3 thin-film electrode grown by pulsed laser deposition
    Guo, XX
    Li, CL
    Zhou, YL
    Chen, ZH
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1999, 17 (03): : 917 - 920
  • [44] Epitaxial growth and electrical transport property of artificial LaNiO3/LaAlO3 superlattices
    Jang, A. N.
    Seung, S. K.
    Choi, K. H.
    Song, J. H.
    CERAMICS INTERNATIONAL, 2012, 38 : S627 - S630
  • [45] Epitaxy of Si nanocrystals by molecular beam epitaxy on a crystalline insulator LaAlO3(001)
    Mortada, Hussein
    Dentel, Didier
    Derivaz, Mickael
    Bischoff, Jean-Luc
    Denys, Emmanuel
    Moubah, Reda
    Ulhaq-Bouillet, Corinne
    Werckmann, Jacques
    JOURNAL OF CRYSTAL GROWTH, 2011, 323 (01) : 247 - 249
  • [46] Conductive LaNiO3 electrode grown by pulsed laser ablation on Si substrate
    Li Sun
    Tao Yu
    Yan-Feng Chen
    Jun Zhou
    Nai-Ben Ming
    Journal of Materials Research, 1997, 12 : 931 - 935
  • [47] Conductive LaNiO3 electrode grown by pulsed laser ablation on Si substrate
    Sun, L
    Yu, T
    Chen, YF
    Zhou, J
    Ming, NB
    JOURNAL OF MATERIALS RESEARCH, 1997, 12 (04) : 931 - 935
  • [48] Ferroelectric properties of LaAlO3 BaTiO3 superlattices prepared by laser molecular-beam epitaxy
    Deng, H. (hdeng@uestc.edu.cn), 1600, American Institute of Physics Inc. (97):
  • [49] Influence of oxygen pressure and aging on LaAlO3 films grown by pulsed laser deposition on SrTiO3 substrates
    Park, Jihwey
    Soh, Yeong-Ah
    Aeppli, Gabriel
    David, Adrian
    Lin, Weinan
    Wu, Tom
    APPLIED PHYSICS LETTERS, 2014, 104 (08)
  • [50] Low temperature Raman study of PrCoO3 thin films on LaAlO3 (100) substrates grown by pulsed laser deposition
    R. Prakash
    S. Kumar
    C. G. Lee
    J. I. Song
    Journal of Central South University of Technology, 2010, 17 : 1144 - 1147