Step-induced elastic relaxation and surface structure of the Si(7710) surface

被引:11
|
作者
Prevot, G. [2 ]
Leroy, F. [1 ]
Croset, B. [2 ]
Garreau, Y. [3 ,4 ]
Coati, A. [3 ]
Mueller, P. [1 ]
机构
[1] Aix Marseille Univ, Ctr Interdisciplinaire Nanosci Marseille, UPR 3118, F-13288 Marseille, France
[2] Univ Paris 06, Inst Nanosci Paris, CNRS, UMR 7588, F-75252 Paris, France
[3] Synchrotron SOLEIL, F-91192 Gif Sur Yvette, France
[4] Univ Paris Diderot, MPQ, CNRS, UMR 7162, F-75205 Paris 13, France
关键词
Elastic relaxation; Si vicinal surface; Surface structure; Grazing Incidence X-ray Diffraction; Buried model; Step-step interaction; X-RAY-DIFFRACTION; VICINAL SI(111) SURFACES; ORIENTATION; TRANSITION; MICROSCOPY; DEPENDENCE; SILICON; STRESS; POINT; SPACE;
D O I
10.1016/j.susc.2011.09.019
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We have studied by Grazing Incidence X-ray Diffraction (GIXD) the strain field induced by periodic triple steps on a Si(7710) surface that is a vicinal of Si(111) surface 10 degrees misoriented towards the [(11) over bar2] direction. We find that the strain field induced by the triple steps is well described by an elastic model in which the steps are modelized by parallel rows of buried elastic dipoles. The best fit of the experimental results is reached on the basis of the (7710) surface structure model proposed by Teys et al. (Surface Science 600 (2006) 4878). The so-obtained dipole characteristics are the dipole amplitude (decomposed in a stretch component P-r = 1.5 nN and a torque component P-s = 0.2 nN) as well as the lever arm Omega = 170 degrees and force Phi = 81 degrees orientations of the dipole. We also determine the prefactor of the elastic interaction energy between triple steps A(el.) = 0.52 eV angstrom we discuss in the light of other independent measurements. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:209 / 216
页数:8
相关论文
共 50 条
  • [1] STEP-INDUCED STATE OF A SI(001) RECONSTRUCTED SURFACE
    UCHIYAMA, T
    TSUKADA, M
    SURFACE SCIENCE, 1993, 282 (1-2) : 152 - 162
  • [2] STEP-INDUCED DECONSTRUCTION AND STEP-HEIGHT EVOLUTION OF THE AU(110) SURFACE
    ROMAHN, U
    VONBLANCKENHAGEN, P
    KROLL, C
    GOPEL, W
    PHYSICAL REVIEW B, 1993, 47 (19): : 12840 - 12851
  • [3] Step-induced one-dimensional surface state on Cu(332)
    Baumberger, F
    Greber, T
    Osterwalder, J
    PHYSICAL REVIEW B, 2000, 62 (23): : 15431 - 15434
  • [4] Step-Induced Oxygen Upward Diffusion on Stepped Cu(100) Surface
    Zhu, Qing
    Saidi, Wissam A.
    Yang, Judith C.
    JOURNAL OF PHYSICAL CHEMISTRY C, 2015, 119 (01): : 251 - 261
  • [6] STEP STRUCTURE TRANSFORMATION OF SI(001) SURFACE INDUCED BY CURRENT
    NATORI, A
    FUJIMURA, H
    YASUNAGA, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (04): : 1164 - 1169
  • [7] Step-induced anisotropic growth of pentacene thin film crystals on a hydrogen-terminated Si(111) surface
    Nishikata, Susumu
    Sazaki, Gen
    Takeuchi, Toshihiko
    Usami, Noritaka
    Suto, Shozo
    Nakajima, Kazuo
    CRYSTAL GROWTH & DESIGN, 2007, 7 (02) : 439 - 444
  • [8] Initial Stages of Germanium Growth on the Si(7710) Surface
    Zhachuk, R. A.
    Romanyuk, K. N.
    Teys, S. A.
    Olshanetsky, B. Z.
    PHYSICS OF THE SOLID STATE, 2009, 51 (01) : 202 - 207
  • [9] The step structure of the Si(557) surface
    Henzler, M
    Zhachuk, R
    THIN SOLID FILMS, 2003, 428 (1-2) : 129 - 132
  • [10] Step-induced optical anisotropy of vicinal Si(001)
    Jaloviar, SG
    Lin, JL
    Liu, F
    Zielasek, V
    McCaughan, L
    Lagally, MG
    PHYSICAL REVIEW LETTERS, 1999, 82 (04) : 791 - 794