A Large Signal Non Quasi Static Compact Model for Printed Organic Thin Film Transistors

被引：0

作者：

Valletta, Antonio ^{[1
]}

Rapisarda, Matteo ^{[1
]}

Calvi, Sabrina ^{[1
]}

Mariucci, Luigi ^{[1
]}

Fortunato, Guglielmo ^{[1
]}

机构：

[1] CNR, IMM, Rome, Italy

来源：

2016 46TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC) | 2016年

关键词：

dynamic compact model; large signal; non quasi static; printed organic thin film transistors;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work we present a large signal non quasi static (LSNQS) compact model based on the discretization of the current continuity equation using a spline collocation approach. The underlying charge/current model is based on the VRH theory. The LSNQS model takes in consideration the presence of parasitic regions and is particularly suited for simulations of printed organic thin film transistors. Some results obtained by a Verilog-A implementation are presented.

引用

页码：460 / 463

页数：4

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