Effects of doping on terahertz quantum-cascade lasers

被引：0
|
作者：
Benz, A. [1 ]
Fasching, G. [1 ]
Deutsch, Ch. [1 ]
Andrews, A. M. [1 ]
Unterrainer, K. [1 ]
Klang, P. [2 ]
Schrenk, W. [2 ]
Strasser, G. [2 ]
机构：
[1] Vienna Univ Technol, Photon Inst, Gusshausstr 29-387, A-1040 Vienna, Austria
[2] Vienna Univ Technol, Ctr Micro & Nanostruct, Inst Solid State Elect, A-1040 Vienna, Austria
来源：
2007 JOINT 32ND INTERNATIONAL CONFERENCE ON INFRARED AND MILLIMETER WAVES AND 15TH INTERNATIONAL CONFERENCE ON TERAHERTZ ELECTRONICS, VOLS 1 AND 2 | 2007年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present the influence of doping on terahertz quantum-cascade lasers. The active region is based on the longitudinal-optical phonon depopulation of the lower laser state. A linear dependency between the threshold current density and the doping is observed. We contribute that to the fact that quantum-cascade lasers require a sub-band alignment prior to lasing. Non-linear effects like electron-electron scattering or changes in the upper state life time play (only a minor role. Concerning the maximum lasing temperature no optimum doping concentration could be found.
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页码：929 / +
页数：2
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