Propagation of phonon pulses in crystalline GaN

被引：3

作者：

Danilchenko, B

Boçkowski, M

Grzegory, I

Guzenko, V

Paszkiewicz, T

Suski, T

机构：

[1] Ukrainian Acad Sci, Inst Phys, UA-252650 Kiev, Ukraine

[2] PAS, Ctr High Pressure Res, Warsaw, Poland

[3] Univ Wroclaw, Inst Theoret Phys, PL-50138 Wroclaw, Poland

来源：

PHYSICA B | 1999年 / 263卷

关键词：

gallium nitride; phonon pulses; diffusive propagation;

D O I：

10.1016/S0921-4526(98)01276-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The propagation of beams of acoustic phonons generated by photoexcitation in a single highly conductive n-type gallium nitride crystal with the c-axis perpendicular to the surface was studied. Diffusive propagation of phonon beams was observed. Estimations of contributions of two main kinds of phonon scatterers, i.e. Ga vacancies and free carriers, show that the latter are responsible for the forming of the diffusive pulses. This conclusion is supported by the results of comparison of propagation of phonon pulses in specimen with the bare surface and with the condensed He-4 film on it. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：727 / 729

页数：3