WS2 transistors on 300 mm wafers with BEOL compatibility

被引：0

作者：

Schram, T. ^{[1
]}

Smets, Q. ^{[1
]}

Groven, B. ^{[1
]}

Heyne, M. H. ^{[1
]}

Kunnen, E. ^{[1
]}

Thiam, A. ^{[1
]}

Devriendt, K. ^{[1
]}

Delabie, A. ^{[1
]}

Lin, D. ^{[1
]}

Lux, M. ^{[1
]}

Chiappe, D. ^{[1
]}

Asselberghs, I. ^{[1
]}

Brus, S. ^{[1
]}

Huyghebaert, C. ^{[1
]}

Sayan, S. ^{[1
]}

Juncker, A. ^{[2
]}

Caymax, M. ^{[1
]}

Radu, I. P. ^{[1
]}

机构：

[1] IMEC, D,Kapeldreef 75, B-3001 Leuven, Belgium

[2] COVENTOR, 3 Ave Quebec, F-91140 Villebon Sur Yvette, France

来源：

2017 47TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC) | 2017年

关键词：

WS2; TMD; 2D; transistor; BEOL; 300; mm; GRAPHENE; FILMS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For the first time, WS2-based transistors have been successfully integrated in a 300 mm pilot line using production tools. The 2D material was deposited using either area selective chemical vapor deposition (CVD) or atomic layer deposition (ALD). No material transfer was required. The major integration challenges are the limited adhesion and the fragility of the few-monolayer 2D material. These issues are avoided by using a sacrificial Al2O3 capping layer and by encapsulating the edges of the 2D material during wet processing. The WS2 channel is contacted with Ti/TiN side contacts and an industry-standard back end of line (BEOL) flow. This novel low-temperature flow is promising for integration of back-gated 2D transistors in the BEOL.

引用

页码：212 / 215

页数：4

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